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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3054 2N3054A DESCRIPTION With TO-66 package APPLICATIONS Designed for general purpose switching and amplifier applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-66) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER CONDITIONS Open emitter Open base Open collector Collector-base voltage Collector-emitter voltage Emitter-base voltage INC Collector current Base current E SEM HANG 2N3054 TC=25ae 2N3054A ONDU IC CTOR 90 55 7 4 2 25 VALUE UNIT V V V A A W Power dissipation Junction temperature Storage temperature 75 200 -65~200 ae ae THERMAL CHARACTERISTICS SYMBOL PARAMETER 2N3054 Rth j-C Thermal resistance junction to case 2N3054A 2.33 MAX 7.0 ae /W UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base -emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=0.1A ; IB=0 IC=0.5A ;IB=50mA IC=3A; IB=1A IC=0.5A ; VCE=4V VCE=90V;VBE(off)=1.5V TC=150ae VCE=30V; IB=0 VEB=7V; IC=0 IC=0.1A ; VCE=10V IC=1A ; VCE=2V 2N3054 2N3054A SYMBOL VCEO VCEsat-1 VCEsat-2 VBE ICEV ICEO IEBO hFE-1 hFE-2 fT MIN 55 TYP. MAX UNIT V 1.0 6.0 1.7 1.0 6.0 0.5 1.0 40 V V V mA mA mA Transition frequency INC MICO GE SE HAN IC=0.2A ; VCE=10V;f=1MHz CTOR NDU 8 80 3.0 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2N3054 2N3054A INC MICO GE SE HAN Fig.2 Outline dimensions CTOR NDU 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3054 2N3054A INC MICO GE SE HAN CTOR NDU 4 |
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